page:p2 - p 1 plastic - encapsulate transistors guangdong hottech industrial co,. ltd. fe a tures epitaxial planar die construction. complementary npn type available pxt2222a. ideal for medium power amplification and switching. maximum ratings (ta=25 unless otherwise noted) par a met e r symbol v alue uni t co l l ector - ba s e v o l t age v cbo - 6 0 v col l ector - emitter v o l t age v ceo - 60 v emitter - base v o l t a g e v ebo - 5 v col l ector cur re n t - conti n u o us i c - 600 m a col l ector p o w e r dissi p a t i on p c 500 m w s torage t e mp e rature t stg - 55 - 150 electrical characteristics (tamb=25 unless otherwise specified) parameter s y mbol test conditions m in m ax u nit collector - b as e breakdo w n voltage v cbo i c = - 10a i e =0 - 60 v collector - e m itter breakd o wn volta g e v ceo i c = - 10ma i b =0 - 60 v emitter - base breakdo w n voltage v ebo i e = - 10a i c =0 - 5 v collector cut - off current i cbo v c b = - 50v i e =0 - 10 na emitter cut - off current i ebo v eb = - 5 v ,i c =0 - 50 na dc c urrent g ain h fe v c e = - 1v i c = - 100 ma v c e = - 1v i c = - 1ma v c e = - 1v i c = - 10ma v c e = - 2v i c = - 150ma v c e = - 10v i c = - 500ma 75 100 100 100 50 - - 300 - collector - e m itter saturation voltage v ce(s a t ) i c = - 150ma i b = - 15ma i c = - 500ma i b = - 50ma - 0.4 - 1.6 v base - emitter saturation voltage v be(sat) i c = - 150ma i b = - 15ma i c = - 500ma i b = - 50ma - 1.3 - 2.6 v transition frequency f t v c e = - 10 v , i c = - 20ma, f=100mhz 200 mhz output cap a citance c obo v c b = - 10v f=1.0mhz i e =0 - 8.0 pf input capac it ance c ibo v eb = - 10v f=1.0mhz i c =0 - 30 pf delay time t d v c e = - 30v, i c = - 150ma, i b1 = - 15ma 10 ns rise time t r 40 ns storage time t s v c e = - 6v, i c = - 150ma i b1 = - i b2 = - 15ma 80 ns fall time t f 30 ns 1. b ase 2. collecto sot - 89 3. emitter p xt 2907a ( p n p )
page:p2 - p 2 plastic - encapsulate transistors guangdong hottech industrial co,. ltd. typical characteris tics p xt 2907a
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